Wzrost epitaksjalny i właściwości warstw poczwórnych na bazie GaSb

Quaternary compounds grown on GaSb substrates are very attractive materials for IR applications. Ga1-xJnxASySb1-y are used as active layers in emitters and detectors, for mid infrared region, whereas Ga1-xAlxASySb1-y compounds are usefull materials for low refractive index cladding layers in DH lasers and for wide gap window layer in photodetectors operating at wavelengths up to 2,4 um. Among various techniques of growing epitaxial layers of III—V semiconductors, liquid phase epitaxy (LPE) still remains interesting method due to its simplicity and satisfactory results.