Obróbka powierzchni (100) GaSb w związkach zawierających siarkę

The influence of sulfide treatments of the (100) GaSb surface have been investigated. Sulfide passivating layers have been prepared by chemical and electrochemical process using 1M Na2S, 21% (NH4)2S, 0,3 M (NH2)2CS aqueous and alcohol solutions. Spectroscopic elipsometry (ES), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) were used to characterize of the superficial sulfide layers. Our results show that sulfide pretreatment in 1M Na2S in isopropanol and annealing under flowing H2 (T= 640°C, t = 1 h) is the best technique of surface preparation of GaSb substrate prior to epitaxy (the thickness of superficial oxide layer is about d = 0,8 nm with minimal surface roughness d= 0,23 nm.