Distinguishing and identification of point and extended defects in DLTS measurements

The convenient and simple criteria which enable us to distinguish between deep level point and extended defects (e.g. dislocations) in DLTS measurements have been proposed. This approach is based on earlier reports of several authors and our own experiences in the field of DLTS measurement data analysis, for III-V semiconductors. It consists of standard DLTS measurements widened by line shape and line behaviour analysis as well as capture kinetics measurements. In the first part, the paper includes a survey of the literature on analysis of the DLTS-signal coming from dislocations. In the second part, selected experimental data on distinguishing and identification of deep point and extended defects, detected in GaAs/GaAs and InGaAs/GaAs heterostructures, have been presented.