Properties and estimated parameters of a submicrometer HSDMAGFET

Main features and predicted values of key parameters of a novel magnetic field sensitive semiconductor device, horizontally-split-drain magnetic field sensitive field effect transistor (HSDMAGFET) which can be used to measure or detect steady or variable magnetic fields have been presented. Operating principle of the transistor is based on one of the galvanomagnetic phenomena and the gradual channel detachment effect (GCDE). The predicted relative sensitivity of the sensor can reach as high value as 100 [%/T]. Furthermore, due to its original structure, the spatial resolution of the MAGFET is extremely high, which makes this device particularly useful in reading magnetically encoded data or magnetic pattern recognition. Besides, a novel device related to the HSDMAGFET, namely, horizontally-split-drain current controlled field effect transistor (HSDCCFET) has been presented.