Computer Simulation of Processes Connected with Electron Donor Fluorescence Quenching in Rigid Matrices. Effect of an External Electric Field

Computer simulation of photoexcited electron-donor D* fluorescence quenching in a rigid matrix has been performed. Three processes are assumed to occur: (1) the natural decay of D* excitation, (2) the electron transfer from D* to acceptor A, (3) migration of the excitation energy among D molecules. The effect of an external electric field F on process (2) has been included into considerations. Fluorescence decay curves calculated for various concentrations of D and the field-induced variation in the donor fluorescence intensity have been compared with respective experimental data and the results obtained from the approximate analytical calculations (hop ping model).