High-temperature InAs1-xSbx photodiodes employing nonequilibrium effects

We determine operational parameters of high temperature (T = 230 K) InAs1-xSbx photodiodes in which nonequilibrium effects occurring near the p-n and l-h abrupt junctions are employed. It is proved that one can enhance the voltage responsivity o f a photodiode by using a heterostructure, thanks to an increase in the dynamic resistance. It is illustrated that relatively small reverse bias of photodiodes makes a considerable increase in their dynamic resistance and an increase in the quantum efficiency. The calculations are performed for photodiodes for the region o f medium infrared (3 ÷ 5.5 µm).