Analysis and investigation of Schottky barrier MOSFET current injection with process and device simulation

In this paper we focus on the implementation of a process flow of SB-MOSFETs into the process simulator of the Synopsys TCAD Sentaurus tool-chain. An improved structure containing topography is briefly discussed and further device simulations are applied with the latest physical models available. Key parameters are discussed and finally the results are compared with fabricated SB-MOSFETs in terms of accuracy and capability of process simulations.

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Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).