Constitutional Supercooling in Czochralski Growth of Heavily Doped Silicon Crystals

This study analyses the phenomenon of constitutional supercooling, which is one of the major problems in industrial growth of heavily doped (> 1020 atoms/cm3) silicon crystals by the Czochralski technique. The systematic study is based on theoretical models and experimental data considering the effect of three important dopants (B, P, and As) in dependence of the relevant growth parameters for the Czochralski process. Based on these results, conclusions will be drawn for the stability limits of the Czochralski growth of dislocation-free heavily doped silicon crystals in dependence of the doping species and their concentration.

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Artykuł przedrukowany z czasopisma "Acta Physica Polonica" A, 2013, Vol.124(2), pp.219-226