Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern

The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and highresolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.

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1. Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).

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2. This work has been completed with the financial support under the program of the Ministry of Education and Science (MEiN): “Regional Initiative of Excellence” in 2019-2022; project no. 014/RID/2018/19. funding amount of 4 589 200.00 PLN. The authors would also like to thank Professor Józef Piotrowski from VIGO Photonics S.A. for the fruitful discussion.