EL and ITG Characterization of Large Areas Black Silicon Solar Cells VIA Screen Printing

A simple process of texturing silicon (Si) surfaces using gold (Au)-catalyzed wet chemical etching was used to form black Si (BS) on a (100) p-type substrate. The surface became uniformly black after 6 min, with a resulting reflectivity of < 2% over the 400 nm to 1100 nm wavelength range. Large areas (153.18 cm2) of black Si solar cells (BSSCs) with an n+-p-p+ structure were also fabricated using conventional processes, including POCl3 diffusion, screen printing, and co-firing. The resulting cells were divided into two groups according to the emitter (46 and 37 [omega]/􀀀), and their output parameters were studied. The best convention efficiency (Eff) was < 10%. The open-circuit voltage (Voc) was particularly low because of poor surface passivation, and the shunt resistance (Rsh) linearly decreased with the series resistance (Rs). Electroluminescence (EL) and infrared thermography (ITG) measurements were conducted to characterize the BSSCs. Both the emissivity and temperature were low and nonuniform. Optimizing the fabrication process by reducing the etching depth and lowering the dopant sheet resistance led to significant improvement in Voc (~48 mV) and Eff (~3.8% absolute). EL and ITG measurements indicate that Rs is another important factor that accounts for the poor properties of the BSSCs.

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W artykule opisano proces teksturowania powierzchni krzemowej w procesie wytrawiania chemicznego z katalizatorem w formie złota, na potrzeby produkcji czarnego krzemu (BS) na podłożu p. Zastosowane rozwiązanie m. in. optymalizacji procesu teksturowania, poprzez redukcję głębokości wytrawiania dało znaczącą poprawę napięcia Voc oraz Eff. Wykonane badania wskazują, że rezystancja szeregowa Rs stanowi ważny czynnik wpływający na działanie ogniw słonecznych, zbudowanych z czarnego krzemu.