Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P

Recently shown photonic and optoelectronic potentialities of Si-based materials and devices require an accurate representation for their optical functions. A predictive model of dielectric function for heavily doped and/or highly excited Si:P is presented. The influence of dopants and of free-carrier population has been calculated independently, allowing the determination of accuracy in usual approximations. The effect of Drude parameters on the heavily doped Si:P optical response is taken into account. All results are supported by experimental data.