Photoresistor based on ZnO nanorods grown on a p-type silicon substrate

In this work we discuss a method of preparation of a highly sensitive light detector based on ZnO nanorods. A photoresistor constructed by us is based on a heterojunction between high quality ZnO nanorods and high resistivity p-type Si used as a substrate for nanorods’ deposition. ZnO nanorods are grown by a modified version of a microwave assisted hydrothermal method which allows for growth of high quality ZnO nanorods in a few minutes. The obtained photoresistor responds to a wide spectral range of light starting from near infrared (IR) to ultraviolet (UV). Properties of the detector are evaluated. We propose the use of the detector as an optical switch.

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Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)