Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

A model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaNxAs1-x. It is found that the sublinear pressure dependence of E- is due to the coupling interaction between E+ and E-. We have also found that GaNxAs1-xneeds much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E+ and E-. The other is that the energy difference between the X conduction band minimum (CBM) and the G CBM in GaNxAs1-x is larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the G CBM in GaNxAs1-xis larger than that in GaAs. It is due to the impurity-host interaction.

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Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).