Optical gain in one-dimensional photonic band gap structures with n-i-p-i crystal layers

The gain enhancement in a layered periodic photonic band gap structure containing active medium based on GaAs n-i-p-i superlattices separated by A1GaAs layers is analyzed. The dependences of extinction coefficient and refractive index on excitation level and wavelength are presented. Transmission characteristics of a probe light versus excitation level are calculated. It is shown that the threshold of generation can be essentially reduced if the wavelength of probe light falls to the band gap edge.