Tytuł pozycji:
Optical gain saturation effects in InAs/GaAs self-assembled quantum dots
- Tytuł:
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Optical gain saturation effects in InAs/GaAs self-assembled quantum dots
- Autorzy:
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Wasiak, M.
Bugajski, M.
Machowska-Podsiadło, E.
Ochalski, T.
Kątcki, J.
Sarzała, R.P.
Maćkowiak, P.
Czyszanowski, T.
Nakwaski, W.
Chen, J. X.
Oesterle, U.
Fiore, A.
Ilegems, M.
- Data publikacji:
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2002
- Język:
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angielski
- Dostawca treści:
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BazTech
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Przejdź do źródła  Link otwiera się w nowym oknie
An attempt has been made to understand electronic structure and optical (lasing) properties of self-assembled InAs/GaAs quantum dots (QD) and to describe saturation effects in QD levels population. The new, improved rate equation model has been developed. The impact of carrier relaxation and level depopulation inside quantum dots on lasing properties, in particular on gain depressing, is discusse.