Tytuł pozycji:
Forming the High quality CoSi2 by solid phase epitaxy
Thin film of CoSi2 were grown on Si(111) by solid phase epitaxy (template technique) in UHV condition. We present a practical experimental procedure for the preparation of thin epitaxial films of cobalt silicide. Layers obtained by the deposition of metal on silicon (111) demonstrate a high-quality crystallographic structure. The state of the surface of growing layers is studied with the in situ combination of reflection high=energy electron diffraction (RHEED) azimuthal plots and rocking curve.
