Tin selenide thin films prepared through combination of chemical precipitation and vacuum evaporation technique

Tin selenide thin films were prepared through combination of chemical precipitation and vacuum evaporation technique. The vacuum deposition was carried out at different quantity of the starting material. The difference in the structural and compositional properties of the deposited films were studied. The films were characterised using various techniques such as x-ray diffractometry, scanning electron microscope and energy dispersive analysis of x-ray. Photoactivity of the samples was studied using linear sweep voltammetry. The films were found to be p-type semiconductors. The optical bandgap energy was found to be indirect and equal to Eg = 1.25 eV.