Analysis of electrical equivalent circuit of metal-insulator-semiconductor structure based on admittance measurements

An electrical equivalent circuit of Al-(thermal)SiO2-(n)Si structure has been proposed and the results of analysis of circuit parameters have been compared with classical methods of investigations of metal-insulator-semiconductor (MIS) structures. The electrical equivalent circuit of the structure contains constant phase elements. The analysis of admittance in terms of frequency characteristics was performed for broad range of biases from inversion to accumulation. The parameters of MIS equivalent circuit determined from impedance spectroscopy data are in good agreement with values obtained by the classical analysis of capacitance-voltage and conductance-voltage characteristics as well as the conductance method.