Possibility of the Application of Low Temperature Plasma for the Deposition of a Polypyrrole Insulating Layer to Construct a Textile-Based Organic Field Effect Transistor

The aim of the study was to demonstrate the idea of using the low temperature plasma technique for depositing a thin fexible polypyrrole insulating layer on a Cu monoflament, which plays the role of the gate in a fbrous organic thin flm transistor. The active layer was composed of pentacene deposited using the thermal sublimation method. The main focus of the research was the selection of the plasma process conditions, such as the time of deposition, the pressure of polymer vapour as well as the power needed to guarantee the optimal thickness of the layer, its smoothness and uniformity. The characteristics of the drain current - drain voltage obtained for the optimal thickness of the polypyrrole electro-insulating layer - in the range of 0.56-0.88 žm indicate a good feld effect, expressed in the modulation of the drain current by the gate voltage and limited value of the leakage current. The results obtained for a cylindrical transistor are comparable to the classical planar OFET's.