Broadband dielectric spectroscopy of ALl/Lu2O3/Al thin film sandwiches.

The paper focuses on the dielectric characterization of electron-beam deposited lutetium oxide thin films sandwiched between aluminium electrodes. The complex capacitance characteristics were measured in the frequency domain (from 10/xHz to 10MHz) with dielectric response analyser. The influence of the temperature, the insulator thickness and sample aging on C'(u>) and C"((D) characteristics was examined. It was shown that high-frequency/low-temperature dielectric data are assigned to the volume of lutetium oxide film, whereas the low-frequency/high-temperature results are connected with M/I interfaces. The width of near-electrode regions (Schottky barriers) was estimated (k = 2.6-4.7 nm).