The doping in the numerical modeling of uniformly doped transferred electron devices

The numerical modeling of the transferred electron devices, having uniformly doped active regions, requires external and usually arbitrary definition of the doping nonuniformity (so called doping notch) which allows the dipole domain creation to be simulate. The application of the properly selected doping notch is very important, because its freatures usually strongly affect the results of the Gunn diode operation modeling. In the paper the influence of the type of those initial conditions, simulating the nucleation of dipole domains on the simulation of Gunn diodes has been analyzed. The results of investigations have been presented for the simulation methods based on two various model of the electron transport: the stationary drift and diffusion model (DD) and the nonstationary energy and momentum balance model (EMB). For these models the parameters of the properly chosen notch have been presented.