Procesy rekombinacji promienistej w cienkich warstwach ZnSe hodowanych metodą epitaksji warstw atomowych

Monocrystalline films of sphaierite-type ZnSe are produced on Ga-As (100) substrates from elemental Zn and Se precursors by atomic layer epitaxy in a gas flow system (ALE-GF). These films show very flat surfaces and very good spectral properties. Bright blue-color excitonic „edge" photoluminescence (PL) emission, characteristic of good quality samples, is observed up to the room temperature. The „parasite" red PL emission, coming from the ZnSe/GaAs interface region, is also observed. The blue and red band PL emissions, when observed together, give an impression of a white color light. The high brightness of such white color PL emission makes ALE-grown ZnSe layers good candidates as e.g. backlighting electroluminescence devices for produced at large scale liquid crystal displays.