Modelling the influence of self-heating on characteristics of IGBTs in the sub-threshold region

The paper refers to modelling characteristics of IGBT in SPICE software with self-heating taken into account. The form of the electrothermal model of the considered transistor and equations describing this model are proposed. The correctness of the proposed model is verified experimentally during the operation of the examined transistor at different cooling conditions. Particular attention is paid to the non-typical course of characteristics of the considered device at weak excitation. The shape of the obtained characteristics is discussed and the influence of the sub-threshold effect in the input MOS structure on these characteristics is analysed.