Simulation framework and thorough analysis of the impact of barrier lowering on the current in SB-MOSFETs

In this paper we present a simulation framework to account for the Schottky barrier lowering models in SBMOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy to extract the different current components and thus accurately predict the on- and off-current regions are adressed. Detailed investigations of these components are presented along with an improved Schottky barrier lowering model for field emission. Finally, a comparison for the transfer characteristics is shown for simulation and experimental data.

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Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).