Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films

Gadolinium oxide (Gd2O3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdOx thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based Gd precursor and water. As-grown GdOx film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick GdOx thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. Wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown GdOx film.

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1. This study was financially supported by Seoul National University of Science & Technology

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2. Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2021).