Data for the article entitled: "Complex Research on Amorphous Vanadium Oxide thin Films Deposited by Gas Impulse Magnetron Sputtering"

Files include the data presented in the manuscript entitled: "Complex Research on Amorphous Vanadium Oxide thin Films Deposited by Gas Impulse Magnetron Sputtering", by Mazur et al., https://doi.org/10.3390/app12188966 

Fig. 1 presents dependence of the deposition rate of vanadium oxides thin films on the Ar:O2 gas ratio during magnetron sputtering.

Fig. 2 presents diffraction patterns of vanadium oxides deposited with various Ar:O2 gas ratios.

Fig. 3h presents an EDS spectrum of a thin film deposited with Ar:O2 ratio of 4:1.

Fig. 4a presents transmission spectra of VxOy thin films deposited with various Ar:O2 gas ratios during the magnetron sputtering process.

Fig. 6 presents the fundamental absorption edge of as‐deposited vanadium oxide thin films.

Fig. 7 presents Current‐voltage characteristics of selected VxOy thin films prepared with Ar:O2 gas ratios of: 3:1, 7:1 and 8:1.

Fig. 8 presents resistivity as a function of 1000/T of vanadium oxide thin films deposited with various Ar:O2 gas ratios during sputtering process.

Fig. 11 presents thermoelectric characteristics of vanadium oxides thin films deposited with various Ar:O2 gas ratios.

Fig. 12 presents gas response upon exposure to the 3.5% of hydrogen of as‐deposited VxOy thin films prepared using various Ar:O2 gas ratios during sputtering: 8:1, 7:1, 6:1, 5:1.

Fig. 13a presents results of the hardness measurement for selected thin films.