Monocrystalline GaN diluted with up to 7% arsenic grown by MOVPE

Files include the data used to produce plots presented in the manuscript entitled: "Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE" by W. Olszewski et al. (https://doi.org/10.1021/acs.cgd.3c01486)

Figure 1. HRXRD diffraction curves of the 00.2 reflections of the samples grown with lower ammonia flow at different temperatures.

Figure 2. HRXRD diffraction curves of the 00.2 reflections of the samples grown with higher ammonia flow at different temperatures.

Figure 3. Rocking curves and RSMs of the samples grown at the highest (a) and the lowest (b) temperatures in the second series with fwhm values marked for GaN- and GaNAs-related peaks.

Figure 4. Fwhm values for GaNAs-related peak in 00.2 ω rocking curves. Results from this work and Kimura, Tang, and Kuech’s work describing materials with lower As content are presented. Straight lines are linear fits highlighting tendencies in the two series.

Figure 7. SIMS profiles of two GaNAs and one GaN reference samples. The left axis depicts As %, and the right axis depicts carbon impurity levels.

Figure 8. Valence band edge regions of XPS spectra for selected samples from the first series are presented with GaN as the reference. Arrows indicate a shift toward the Fermi level from GaN VBM for samples with As.

Figure 9. Valence band edge region of XPS spectra for samples from the second series are presented. The pure GaN VBM was marked as a reference point. Arrows indicate a shift toward the Fermi level from GaN VBM for samples with As.

Data was calculated using OriginLab software, CasaXPS software and X'pert Epitaxy software.