Thin films of transition metal dichalcogenides grown by MBE method. The influence of substrate on MoTe2 structure, morphology and magnetotransport properties

The MBE is a powerful method to obtain diverse solid state compounds. The data present summary of the investigations of growth of MoTe2 - transition metal dichalcogenide. The influence of substrate and the growth parameters on MoTe2 structure, morphology and magnetotransport properties are discussed.

MoTe2_TEM_a, b, c show transmission electron microscope (TEM) images of the MoTe2 layers, grown on sapphire substrate at a) Tsource =270degC and (b)-(c) Tsource=350degC.

The .txt files correspond to Raman scattering spectra (intesity versus Raman shift in cm^-1), for samples obtained at various Te cell temperatures as indicated in the filename.