Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN

The successful development of graphene Schottky barrier diodes (Gr SBDs) acting as an efficient semi-transparent contact to n-GaN has been demonstrated. Gr Schottky barrier diodes on n-GaN sample grown by the metal organic vapor phase (MOVPE) technique were fabricated and used in the measurements of steady-state photo-capacitance (SSPC) and deep level optical spectroscopy (DLOS), respectively. It is shown that SSPC and DLOS spectra obtained for Gr SBDs are in excellent agreement with Ni-based semi-transparent contacts to n-GaN used in this study for comparison. Additionally, the optical capture cross-section data (σ0) derived from DLOS were fitted using the Lucovsky model, under the assumption of no lattice relaxation for all deep traps observed in this study.

A set of raw experimental data that consists of:

1. Raman spectra of CVD Graphene on GaN substrate.
2. Capacitance-voltage traces and current-voltage characteristics for Ni/Au and Gr SBDs carried out at T = 293 K.
3. Steady-state photo-capacitance (SSPC) spectra of the n-GaN samples with Ni/Au and Gr semi-transparent Schottky contacts.
4. DLOS spectra corresponding to the SSPC data including Lucovsky model fitting.
5. The voltage dependence of the ideality factor n in Gr/GaN and Ni/GaN SBDs.
6. Density of states (Ds) vs Ec-E for Gr and Ni SBD.