Electrical Resistivity and Electronic Structure of the $Tb_{x}Gd_{1-x}Ni_3$ System

In the paper the electric properties and electronic structure of the intermetallic $Tb_{x}Gd_{1-x}Ni_3$ compounds are presented. The partial replacement of Gd by Tb atoms causes the decrease of the Curie temperature $(T_{C})$ and the increase of the residual resistivity. According to the Matthiessen rule the scattering mechanisms in ρ(T) have been analyzed. Moreover, the reduced form of the electrical resistivity $ρ_{Z} (T - T_{0})$ indicates a deviation from the linearity for x > 0.2. This kind of behaviour can be attributed to density of d states near by the Fermi level $(E_{F})$ which are dominated by Ni 3d states. The valence band spectra as well as the core level lines have been analyzed as the influence of Tb/Gd substitution on the electronic structure.