Tytuł pozycji:
The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN
- Tytuł:
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The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN
- Autorzy:
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Matys, M.
Miczek, M.
Adamowicz, B.
Żytkiewicz, Z.
Kamińska, E.
Piotrowska, A.
Hashizume, T.
- Data publikacji:
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2011-12
- Wydawca:
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Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
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78.55.-m
71.35.-y
73.20.-r
71.55.-i
02.70.Dh
- Źródło:
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Acta Physica Polonica A; 2011, 120, 6A; A-073-A-075
0587-4246
1898-794X
- Język:
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angielski
- Prawa:
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Wszystkie prawa zastrzeżone. Swoboda użytkownika ograniczona do ustawowego zakresu dozwolonego użytku
- Dostawca treści:
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Biblioteka Nauki
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Przejdź do źródła Link otwiera się w nowym oknie
The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from $10^{15}$ to $10^{19}$ photon $cm^{-2} s^{-1}$) for n-GaN samples with various surface passivating layers $(Al_2O_3, SiO_2)$.
