Tytuł pozycji:
Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis
- Tytuł:
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Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis
- Autorzy:
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Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Dunetz, B.
Wesch, W.
Wendler, E.
Karwat, C.
- Data publikacji:
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2011-07
- Wydawca:
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Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
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61.80.-x
61.72.Ff
63.20.-e
78.66.-w
- Źródło:
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Acta Physica Polonica A; 2011, 120, 1; 87-90
0587-4246
1898-794X
- Język:
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angielski
- Prawa:
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Wszystkie prawa zastrzeżone. Swoboda użytkownika ograniczona do ustawowego zakresu dozwolonego użytku
- Dostawca treści:
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Biblioteka Nauki
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Przejdź do źródła Link otwiera się w nowym oknie
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
