High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves

Szczegóły
Opis

Tytuł:: High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves
Autorzy:: Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Reggiani, L.
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.30.+q
72.70.+m
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 117-120
0587-4246
1898-794X
Język:: angielski
Prawa:: Wszystkie prawa zastrzeżone. Swoboda użytkownika ograniczona do ustawowego zakresu dozwolonego użytku
Dostawca treści:: Biblioteka Nauki
: Artykuł

Przejdź do źródła

The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.

Informacja

High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves