Bound Exciton Luminescence in Phosphorus Doped Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Crystals

Measurement of photoluminescence as a function of temperature and of magnetic field in p-type phosphorus doped Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te is reported. From the conduction band-acceptor level transition, the ionization energy of P-acceptors is obtained to be 54ą1 meV. The photoluminescence spectrum in the band edge region exhibits three maxima connected with the recombination of excitons bound to neutral acceptors (A$\text{}^{0}$, X), excitons bound to neutral donors (D$\text{}^{0}$,X), and free excitons (X) at energies E$\text{}_{(A^{0},X)}$=1.606, E$\text{}_{(D^{0},X)}$=1.610, and E$\text{}_{X}$=1.614 eV, respectively. At T=1.4 K a strong increase in PL intensity of (A$\text{}^{0}$, X) line 8-fold as a function of magnetic field is found and shown to originate from the magnetic field-induced lowering of the acceptor binding energy and increase in the hole effective volume.