Towards a gm/Id design methodology for polymer-based organic thin film transistors

In this paper we show based on experiments that an invariant representation exists for various polymer-based solution processable organic thin film transistors (OTFTs). Despite the fact that this technology suffers from a non-negligible spread of parameters, all experimental data exhibit low dispersion when represented in a gm/Id versus Id diagram. This result is important for circuit design strategy based on the gm/Id representation, giving more insight into analogue design methodology. In addition, the gm/Id invariant can also be used to extract the gale voltage mobility dependence that is inherent to organic field effect transistor.