Studies of dynamics of memristor-based memory cells

Construction of memristive memories requires usage of stable and reliable individual memory devices. So far several technologies were tested to implement the memristive RRAM elements. Many of these use the metal-oxide/metal junctions. In this paper we look into dynamic phenomena encountered in real memristors realised as solid state devices in the Pt/HfO2/Ti/Pt technology. We test the forming behaviour and repeatability of the process. The switching behaviour is studied in detail. Further, we investigate phenomena associated with switching behaviour induced by voltage pulsing techniques. The pulsing technique allows for fast transition between the stable states characterised by different device resistances.